Seoul, September 12, 2025 – SK hynix Inc. announced it has completed development and finished preparation of a next-generation high-bandwidth memory product HBM4.
The company said HBM4 vertically interconnects multiple DRAM chips and increases data processing speed in comparison to conventional DRAM products. There are six generations of HBM, starting with the original HBM which was followed by HBM2, HBM2E, HBM3, HBM3E, and HBM4.
SK hynix said that the company has successfully completed development and has prepared HBM4 mass production to lead the AI era. Through this momentum, the company has once again proven the AI memory leadership in the global market.
“Completion of HBM4 development will be a new milestone for the industry,” Joohwan Cho, Head of HBM Development at SK hynix, who has led the development, said. “By supplying the product that meets customer needs in performance, power efficiency and reliability in timely manner, the company will fulfill time to market and maintain competitive position.”
With recent increase in AI demand and data processing, the needs for high bandwidth memory for faster system speed are surging. In addition, securing memory power efficiency has emerged as a key requirement for customers as power consumption for data center operation has increased. SK hynix expects HBM4, with increased bandwidth and power efficiency, to be the optimal solution to meet customers’ needs.
HBM4, of which mass production system has been readied, has the industry’s best data processing speed and power efficiency with the bandwidth doubled through adoption of 2,048 I/O terminals, double from the previous generation, and power efficiency improved by more than 40 percent. The company expects to improve AI service performance by up to 69% when the product is applied, which will lead to solve data bottleneck and significantly reduce data center power costs.
The company has exceeded the JEDEC (Joint Electron Device Engineering Council)standard operating speed(8Gbps) by implementing over 10Gbps(Gigabit per second) operating speed in HBM4.
In addition, the company adopted the Advanced MR-MUF (Mass Reflow Molded Underfill) process in HBM4, which has been proven to be reliable in the market, and the 1bnm process, or the fifth-generation of the 10-nanometer technology, to minimize the risk in mass production.
“We are unveiling the establishment of the world’s first mass production system of HBM4,” Justin Kim, President & Head of AI Infra at SK hynix, said. “HBM4, a symbolic turning point beyond the AI infrastructure limitations, will be a core product for overcoming technological challenges.” “We will grow into a full-stack AI memory provider by supplying memory products with the best quality and diverse performance required for the AI era in a timely manner.”
